Al2O3 MOSHEMTs also show better performance than SiNx MISHEMTs in resisting proton damage. Furthermore, AlGaN/GaN HEMTs with gate dielectrics (Al2O3, SiNx) exhibit better irradiation resistance than traditional AlGaN/GaN HEMTs, which produce fewer vacancies at the channel after proton irradiation.
The vacancies produced by proton irradiation, especially Ga vacancy (VGa), are found to be responsible for the device degradation by carrier removal and mobility degradation, which directly influence the saturation drain current and maximum transconductance of AlGaN/GaN-based devices. Thank you for your patience.In this study, the simulations of AlGaN/GaN-based devices, including AlGaN/GaN high electron mobility transistor (HEMT), Al2O3 metal–oxide–semiconductor high electron mobility transistor (MOSHEMT), and SiNx metal–insulator–semiconductor high electron mobility transistor (MISHEMT), were studied to investigate the degradation mechanism after proton irradiation. If you are currently locked out of your account, please send an email to with your username and we will try to respond and unlock your account as quickly as possible. We are working now to improve the reliability of our login system, however, this will only fix future accounts that are created. After logging in once during account creation, subsequent logins fail on the first screen with a message about bad username or password. The symptoms however are usually the same. Creating accounts during times when the servers were overloaded.Setting up accounts with unsupported browsers.Incompatibility with certain browser extensions.The causes for this vary widely, but include We are aware that there is a login problem impacting a small number of users. The username should be ‘username’ not If this is indeed the cause of your login problem and you have already emailed we recommend sending another email to so we don’t un-necessarily reset your password.
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